copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 1 /7 SW200R10VT absolute maximum ratings symbol parameter value unit to - 252 to - 251 sop - 8 v dss drain to source voltage 100 v i d continuous drain current (@t c =25 o c) 36* a continuous drain current (@t c =100 o c) 23 * a i dm drain current pulsed (note 1) 144 a v gs gate to source voltage 2 0 v e as single pulsed avalanche energy (note 2) 72 mj e ar repetitive avalanche energy (note 1) 11 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns p d total power dissipation (@t c =25 o c) 117 160 w total power dissipation (@t a =25 o c) 2.9 w derating factor above 25 o c 0.9 1.3 0.02 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c thermal characteristics symbol parameter value unit to - 252 to - 251 sop - 8 r thjc thermal resistance, junction to case 1.07 0.78 o c /w r thja thermal resistance, junction to ambient 73 43 o c /w *. drain current is limited by junction temperature. to - 252/to - 251 1. gate 2. drain 3. source sop - 8: 4.gate 5,6,7,8.drain 1,2,3.source order codes item sales type marking package packaging 1 sw d 200r10vt sw 200r10vt to - 252 reel 2 sw i 200r10vt sw 200r10vt to - 251 tube 3 sw k 200r10vt sw 200r10vt sop - 8 reel n - channel enhanced mode to - 252/to - 251/sop - 8 mosfet features ? high ruggedness ? low r ds( on ) (t yp 19.5m ? )@v gs =4.5v (t yp 18.7m ? )@v gs =10v ? low gate charge ( typ 86nc) ? improved dv/dt capability ? 100% avalanche tested ? application: synchronous rectification , li battery protect board , inverter . general description this power mosfet is produced with advanced technology of samwin. this technology enable the power mosfet to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. bv dss : 100 v i d : 36 a r ds(on) : 19.5m ? @v gs =4.5v 18.7m ? @v gs =10v g d s to - 252 1 2 3 to - 251 1 2 3 sop - 8 g(4) d(5,6,7,8) s(1,2,3) n ote: r thja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. r thj c is guaranteed by design while r th ca is determined by the user's board design. sop - 8 r thja : 43 o c/w on a 1 in 2 pad of 2oz copper. d d d d g s s s
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 2 /7 SW200R10VT electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 100 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.07 v/ o c i dss drain to source leakage current v ds = 100 v, v gs =0v 1 ua v ds =80v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs = 2 0v, v ds =0v 100 na gate to source leakage current, reverse v gs = - 2 0v, v ds =0v - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1.5 2.5 v r ds(on) drain to source on state resistance(to251&to252) v gs =4.5v, i d = 18 a 19.5 25 m ? v gs =10v, i d = 18 a 18.7 23 v gs =10v, i d = 36 a 19.1 24 drain to source on state resistance(sop8) v gs =4.5v, i d = 18 a 22.8 28.5 v gs =10v, i d = 18 a 22.0 27.5 g fs forward transconductance v ds =10v, i d =18a 77 s dynamic characteristics c iss input capacitance v gs =0v, v ds = 50 v, f=1mhz 4410 pf c oss output capacitance 165 c rss reverse transfer capacitance 153 t d(on) turn on delay time v ds = 5 0v, i d = 36 a, r g =25?, v gs =10v (note 4,5) 26 ns t r rising time 61 t d(off) turn off delay time 321 t f fall time 116 q g total gate charge v ds = 8 0v, v gs =10v, i d = 36 a (note 4,5) 86 nc q gs gate - source charge 15 q gd gate - drain charge 20 r g gate resistance v ds =0v, scan f mode 1.5 ? source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 36 a i sm pulsed source current 144 a v sd diode forward voltage drop. i s = 36 a, v gs =0v 1.4 v t rr reverse recovery time i s = 36 a, v gs =0v, di f /dt=100a/us 42 ns q rr reverse recovery charge 70 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l =0.5mh, i as =17a, v dd =50v, r g =25?, starting t j = 25 o c 3. i sd 36 a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2%. 5. essentially independent of operating temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 3 /7 SW200R10VT fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 4. on - state current vs. diode forward voltage fig. 3. on - resistance variation vs. drain current and gate voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on - resistance variation vs. junction temperature
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 4 /7 SW200R10VT fig. 9 . maximum safe operating area(to - 252) fig. 7. gate charge characteristics fig. 8. c apacitance characteristics fig. 10 . maximum safe operating area(to - 251) fig. 11 . maximum safe operating area(sop - 8)
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 5 /7 SW200R10VT fig. 13. transient thermal response curve(to - 251) fig. 12. transient thermal response curve(to - 252) fig. 14. transient thermal response curve(sop - 8)
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 6 /7 SW200R10VT v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 16 . switching time test circuit & waveform fig. 15. gate charge test circuit & waveform fig. 17 . unclamped inductive switching test circuit & waveform
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2017. rev. 3.0 7 /7 SW200R10VT disclaimer * all the data & curve in this document was tested in xian semipower testing & application cente r. * this product has passed the pct,tc,htrb,htgb,hast,pc and solderdunk reliability testing. * qualification standards can also be found on the web site ( http://www.semipower.com.cn ) * suggestions for improvement are appreciated, please send your suggestions to samwin@samwinsemi.com fig. 18 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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